Technical Papers
A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C A Perspective on the GaN Injection Laser Cathodoluminescence study of erbium and oxygen coimplanted Gallium Nitride thin films on sapphire substrates Comparison of GaN and 6H-SiC p-i-n Photodetectors with Excellent Ultraviolet Sensitivity and Selectivity Deep levels and persistent photoconductivity in GaN thin films Electrical Characterization of GaN/SiC n-p heterojunction diodes Electroluminescence from erbium and oxygen coimplanted GaN Electron Emission from GaN n-p Junctions High-Power High-Temperature HBT with Gallium Nitride Emitter High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain Optical characterization of GaN/SiC n-p heterojunctions and p-SiC Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN Photocurrent decay in n-type GaN thin films Photoluminescence excitation measurements on erbium implanted GaN Study of defect states in GaN films by photoconductivity measurement The effect of threading dislocations, Mg doping, and etchingon the spectral responsivity in GaN-based UV detectors
